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dc.contributor.authorSelbmann P
dc.contributor.authorGulia M
dc.contributor.authorRossie F
dc.contributor.authorMolinari E
dc.contributor.authorLugli P
dc.contributor.editorHess K
dc.contributor.editorLeburton JP
dc.contributor.editorRavaioli U
dc.date.accessioned2019-05-31T12:52:43Z
dc.date.available2019-05-31T12:52:43Z
dc.date.issued1996
dc.identifier.isbn978-1-4613-8035-1
dc.identifier.urihttp://dx.doi.org/10.1007/978-1-4613-0401-2_5
dc.identifier.urihttp://link.springer.com/chapter/10.1007/978-1-4613-0401-2_5
dc.identifier.urihttp://hdl.handle.net/10863/9983
dc.description.abstractOptical excitation above the band gap of a semiconductor generates hot carrier distributions which subsequently relax towards an equilibrium with the crystal lattice. Simultaneously, electron-hole (e-h) pairs may undergo assisted transitions to excitonic bound states. These free excitons are created with large center-of-mass wave vectors, K: to become optically active they have to be scattered into states with K ≈ 0 and s-symmetry by inelastic collisions. The time-resolved measurement of the resulting luminescence1 provides information about these intrinsic processes of exciton formation and relaxation. However, the interpretation of the experiments is difficult due to the various competing interactions of free carriers and excitons and a kinetic model of the system is needed.en_US
dc.languageEnglish
dc.language.isoenen_US
dc.publisherSpringer USen_US
dc.relation
dc.rights
dc.titleDynamics of Exciton Formation and Relaxation in Semiconductorsen_US
dc.typeBook chapteren_US
dc.date.updated2019-05-30T03:00:20Z
dc.publication.titleHot Carriers in Semiconductors: Part 1
dc.language.isiEN-GB
dc.description.fulltextnoneen_US


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