Enhanced Zener tunneling in silicon
Di Carlo A
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We have investigated Zener tunneling in PIN silicon diodes by means of tight-binding calculations. Even though Zener tunneling is essentially a k-conserving process, we are able to demonstrate enhanced Zener tunneling in indirect band gap material by means of band gap modulation. A realistic example is presented for SiGe-modulated diodes. (C) 1997 Elsevier Science Ltd. All rights reserved.