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dc.contributor.authorDi Carlo A
dc.contributor.authorLugli P
dc.contributor.authorKavokin A
dc.contributor.authorVladimirova M
dc.contributor.authorVogl P
dc.contributor.editor
dc.date.accessioned2019-05-31T12:40:49Z
dc.date.available2019-05-31T12:40:49Z
dc.date.issued1997
dc.identifier.issn0370-1972
dc.identifier.urihttp://dx.doi.org/10.1002/1521-3951(199711)204:1<420::AID-PSSB420>3.0.CO;2-I
dc.identifier.urihttp://onlinelibrary.wiley.com/doi/10.1002/1521-3951(199711)204:1<420::AID-PSSB420>3.0.CO;2-I/full
dc.identifier.urihttp://hdl.handle.net/10863/9971
dc.description.abstractWe have investigated Zener tunneling in PIN silicon diodes by means of tight-binding calculations. We are able to demonstrate enhanced Zener tunneling in indirect band gap material by means of band gap modulation. Evidence of such phenomena have also been obtained in the absorption coefficient for a band gap modulated PIN diode. A realistic example is presented for SiGe-modulated diodes.en_US
dc.languageEnglish
dc.language.isoenen_US
dc.publisherAKADEMIE VERLAG GMBHen_US
dc.relation
dc.rights
dc.titleEnhanced coherent Zener tunneling in indirect gap semiconductorsen_US
dc.typeArticleen_US
dc.date.updated2019-05-30T03:00:38Z
dc.publication.title
dc.language.isiEN-GB
dc.journal.titlephysica status solidi (b)
dc.description.fulltextreserveden_US


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