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dc.contributor.authorLugli P
dc.contributor.authorPaciotti M
dc.contributor.authorCalleja E
dc.contributor.authorMunoz E
dc.contributor.authorSanchez-Rojas J
dc.contributor.authorDessenne F
dc.contributor.authorFauquembergue R
dc.contributor.authorThobel J
dc.contributor.authorZandler G
dc.contributor.editorRoss RL
dc.contributor.editorSvensson SP
dc.contributor.editorLugli P
dc.date.accessioned2019-05-31T12:37:38Z
dc.date.available2019-05-31T12:37:38Z
dc.date.issued1996
dc.identifier.isbn978-94-010-7228-1
dc.identifier.urihttp://dx.doi.org/10.1007/978-94-009-1630-2_7
dc.identifier.urihttp://link.springer.com/chapter/10.1007/978-94-009-1630-2_7
dc.identifier.urihttp://hdl.handle.net/10863/9967
dc.description.abstractThe paper presents a series of modeling tools for pseudomorphic High Electron Mobility Transistors, discussing their physical content and presenting specific applications. The presented results will show the most peculiar features of electronic transport in such device.en_US
dc.languageEnglish
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation
dc.rights
dc.titleHEMT models and simulationsen_US
dc.typeBook chapteren_US
dc.date.updated2019-05-30T03:00:48Z
dc.publication.titlePseudomorphic HEMT Technology and Applications
dc.language.isiEN-GB
dc.description.fulltextnoneen_US


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