Show simple item record

dc.contributor.authorDi Carlo A
dc.contributor.authorReale A
dc.contributor.authorTocca L
dc.contributor.authorLugli P
dc.date.accessioned2019-05-31T12:32:17Z
dc.date.available2019-05-31T12:32:17Z
dc.date.issued1998
dc.identifier.issn0018-9197
dc.identifier.urihttp://dx.doi.org/10.1109/3.709590
dc.identifier.urihttps://api.elsevier.com/content/abstract/scopus_id/0032163833
dc.identifier.urihttp://hdl.handle.net/10863/9961
dc.description.abstractWe present a tight-binding analysis of the polarization dependence of GaAs δ-strained semiconductors optical amplifiers. Our approach allows us to account for band nonparabolicity, valence band mixing, as well as thin layer perturbations, overcoming the natural limitations of standard techniques based on the envelope function formalism. We explain how thin strained GaAs layers embedded in a lattice-matched InGaAsP-InGaAs quantum well can be used to achieve polarization-insensitive optical amplification. The theory is also applied to other structures providing optical amplification, showing how the concept of "virtual barriers" can lead to high polarization insensitivity.en_US
dc.languageEnglish
dc.language.isoenen_US
dc.relation
dc.rights
dc.subjectSemiconductor optical amplifiersen_US
dc.subjectTight-bindingen_US
dc.titlePolarization-independent δ-strained semiconductor optical amplifiers: A tight-binding studyen_US
dc.typeArticleen_US
dc.date.updated2019-05-30T03:00:58Z
dc.language.isiEN-GB
dc.journal.titleIEEE Journal of Quantum Electronics
dc.description.fulltextnoneen_US


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record