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dc.contributor.authorFiorentini V
dc.contributor.authorBernardini F
dc.contributor.authorDella Sala F
dc.contributor.authorDi Carlo A
dc.contributor.authorLugli P
dc.contributor.editor
dc.date.accessioned2019-05-31T12:29:21Z
dc.date.available2019-05-31T12:29:21Z
dc.date.issued1999
dc.identifier.issn1098-0121
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.60.8849
dc.identifier.urihttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.60.8849
dc.identifier.urihttp://hdl.handle.net/10863/9956
dc.description.abstractHuge built-in electric fields have been predicted to exist in wurtzite III-V nitrides thin films and multilayers. Such fields originate from heterointerface discontinuities of the macroscopic bulk polarization of the nitrides. Here we discuss the background theory, the role of spontaneous polarization in this context, and the practical implications of built-in polarization fields in nitride nanostructures. To support our arguments, we present detailed self-consistent tight-binding simulations of typical nitride quantum well structures in which polarization effects are dominant.en_US
dc.languageEnglish
dc.language.isoenen_US
dc.publisherAMER PHYSICAL SOCen_US
dc.relation
dc.rights
dc.titleEffects of macroscopic polarization in III-V nitride multiple quantum wellsen_US
dc.typeArticleen_US
dc.date.updated2019-05-30T03:01:05Z
dc.publication.title
dc.language.isiEN-GB
dc.journal.titlePhysical review B: Condensed matter and materials physics
dc.description.fulltextnoneen_US


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