Full-band approaches for the quantum treatment of nanometer-scale MOS structures
Di Carlo A
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Using quantum mechanical methods that include the full-band structure, we study two quantum mechanical phenomena that occur in MOS transistors: ultrathin oxide tunneling and inversion layer quantization. We obtain good agreement between calculated and measured tunneling current densities for a n-poly Si/SiO 2 /p-Si capacitor under negative gate bias. In addition, we find that for typical inversion layer fields, quantization energies <0.5 eV can be calculated with extremely high accuracy in the parabolic effective-mass approximation. © 2002 Elsevier Science B.V. All rights reserved.