Optical and Electronic Properties of GaN Based Heterostructures: A Self-Consistent Time-Dependent Approach
Di Carlo A
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We present a study of optical properties in GaN based structures and devices. Our approach is based on a rate equation model, where the role of carrier screening on recombination rates is self-consistently included. We demonstrate that Time-Resolved Photoluminescence (TR-PL) in gallium-nitride quantum wells is influenced by two main effects: (i) the charge accumulation in the well, caused by the separation of the wavefunctions and by the increase of the radiative recombination time induced by the built-in field, and (ii) the loss of carriers from the ground level induced by the non-radiative recombination processes.