Enhancement of the effective tunnel mass in ultrathin silicon dioxide layers
Di Carlo A
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The enhancement of the effective tunnel mass in ultrathin silicon dioxide (SiO) layers was presented. The mass at the conduction band bottom of SiO was found to be different from the tunnel mass. The oxide thickness was also obtained with the help of current-voltage fitting. It was found that the mass at the bottom of the lowest conduction band of the oxide was equal to 0.39 m.