Full band approach to tunneling in MOS structures
Di Carlo A
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Using atomistic quantum mechanical tight-binding (TB) methods that include the full band structure, we study electron tunneling through three-dimensional models of n -Si/SiO /p-Si capacitors with thicknesses between 0.7 and 4.4 nm. We find that the microscopic oxide structure influences transmission coefficients and tunnel currents significantly. The best agreement with experimental current-thickness and current-voltage data is obtained for a model derived from the β-cristobalite polytype of SiO that has a fairly small conduction band mass of 0.34 m . Standard approximate effective mass-based methods reproduce the TB results only if an energy and oxide thickness dependence of the mass parameter is introduced.
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Di Carlo A; Lugli P; Kavokin A; Vladimirova M; Vogl P (AKADEMIE VERLAG GMBH, 1997)We have investigated Zener tunneling in PIN silicon diodes by means of tight-binding calculations. We are able to demonstrate enhanced Zener tunneling in indirect band gap material by means of band gap modulation. Evidence ...
Di Carlo A; Lugli P; Vogl P (PERGAMON-ELSEVIER SCIENCE LTD, 1997)We have investigated Zener tunneling in PIN silicon diodes by means of tight-binding calculations. Even though Zener tunneling is essentially a k-conserving process, we are able to demonstrate enhanced Zener tunneling in ...