Full band approach to tunneling in MOS structures
Di Carlo A
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Using atomistic quantum mechanical tight-binding (TB) methods that include the full band structure, we study electron tunneling through three-dimensional models of n -Si/SiO /p-Si capacitors with thicknesses between 0.7 and 4.4 nm. We find that the microscopic oxide structure influences transmission coefficients and tunnel currents significantly. The best agreement with experimental current-thickness and current-voltage data is obtained for a model derived from the β-cristobalite polytype of SiO that has a fairly small conduction band mass of 0.34 m . Standard approximate effective mass-based methods reproduce the TB results only if an energy and oxide thickness dependence of the mass parameter is introduced.
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Bareiß M; Hochmeister A; Jegert G; Zschieschang U; Klauk H; Huber R; Grundler D; Porod W; Fabel B; Scarpa G; Lugli P (2011)A large area array of metal-oxide-metal (MOM) tunneling diodes with an ultrathin dielectric (∼3.6 nm aluminum oxide) have been fabricated via a transfer-printing process. The MOM diodes exhibit an excellent tunneling ...