Design and simulation of novel architectures for nanodevices
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This paper shows how circuit and architecture level simulations can be applied in nanoelectronics. The methodology is illustrated with two examples: passive crossbar memories (made from ZnO or molecular rectifiers) and magnetic field-coupled devices. We will demonstrate how device-level physical tools can help in the modelling of system-level properties such as power gain and scalability. © 2007 IEEE.