Electronic transport modeling with HSPICE in random CNT networks
MetadataShow full item record
A Monte Carlo based computational model was developed to analyze the electrical transport properties in networks of randomly arranged single wall carbon nanotubes. The CNTs are modeled as stiff sticks with a lognormal distributed length. The average stick length and diameter size are deduced from a CNT film fabricated with the spray deposition technique. Intertube junctions as well as single tubes are represented by resistances. The analyzed networks are composed of both metallic and semiconducting CNTs in a ratio of 1/3. The electrical properties are obtained with the circuit analysis and simulation tool HSPICE. The measured sheet resistances and conductivities were compared with the simulation results. The validity of the model is confirmed by the good match between the simulation and experimentally obtained results. © 2012 IEEE.
Showing items related by title, author, creator and subject.
On the performance of solution-Processable random network carbon Nanotube Transistors: Unveiling the role of network density and metallic tube content Gong Q; Bhatt V; Albert E; Abdellah A; Fabel B; Lugli P; Scarpa G (Institute of Electrical and Electronics Engineers Inc., 2014)This paper reveals the influence of network density and metallic tube content on the performance of random network-based carbon nanotube field-effect transistors (CNTFETs) in terms of on-current, on/off ratio, and field-effect ...
Colasanti S; Bhatt V; Abdellah A; Lugli P (Institute of Physics Publishing, 2015)A numerical percolative model for simulations of random networks of carbon nanotubes is presented. This algorithm takes into account the real 3D nature of these networks, allowing for a better understanding of their ...