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dc.contributor.authorBecherer M
dc.contributor.authorCsaba G
dc.contributor.authorEmling R
dc.contributor.authorOsswald P
dc.contributor.authorPorod W
dc.contributor.authorLugli P
dc.contributor.authorSchmitt-Landsiedel D
dc.contributor.editorIEEE
dc.date.accessioned2019-04-29T09:58:52Z
dc.date.available2019-04-29T09:58:52Z
dc.date.issued2008
dc.identifier.isbn978-1-4244-1572-4
dc.identifier.urihttp://dx.doi.org/10.1109/INEC.2008.4585662
dc.identifier.urihttp://ieeexplore.ieee.org/document/4585662/?arnumber=4585662
dc.identifier.urihttp://hdl.handle.net/10863/9575
dc.description.abstractThis work demonstrates a novel extraordinary Hall-effect sensor which is designed to probe the magnetization state of micron-scale Co/Pt dots. The applied split-current geometry is well-suited for the electrical readout of field-coupled computing structures realized by focused ion (FIB) techniques. The electrically measured hysteresis loop is in good agreement with SQUID measured hysteresis curves of identical layer stacks. Full reversal in a perpendicular field causes an approximately 0.1 percent change in the Hall-resistivity of the film. We argue that this sensor is scalable all the way down to probe single domain Co/Pt dots with lateral dimensions of 200 nm·200 nm. © 2008 IEEE.en_US
dc.languageEnglish
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.relation2nd IEEE International Nanoelectronics Conference (INEC 2008) ; Shanghai : 24.3.2008 - 27.3.2008
dc.rights
dc.titleExtraordinary Hall-effect sensor in split-current design for readout of magnetic field-coupled logic devicesen_US
dc.typeBook chapteren_US
dc.date.updated2019-04-28T03:01:19Z
dc.publication.title2008 2nd IEEE International Nanoelectronics Conference: INEC 2008; 24 - 27 March 2008, Shanghai, China
dc.language.isiEN-GB
dc.description.fulltextreserveden_US


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