Analytical Model of Trapping Effects in Organic Thin-Film Transistors
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We report an analytical model for organic thin-film transistors that accounts for the influence of trap states on the current voltage characteristics. As the subthreshold regime sensitively reacts to the presence of traps, it is used to extract approximate trap parameters from experimental transistor data. To demonstrate the capability of our method, a comparison with the results of 2-D drift-diffusion simulations is provided.
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