Series resistance mapping of III-V multijunction solar cells based on luminescence imaging
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SubjectMultijunction photovoltaic cells; Series resistance; Electroluminescence (EL); Photoluminescence
A method for spatially resolved series resistance measurements of Ga InP/Ga(In)As/Ge triple-junction solar cells based on electro- and photoluminescence imaging is presented. The results gained from luminescence images of all three subcells clearly indicate the main contributions to the series resistance like interrupted gridfingers, the frontside metallization itself and the top cell emitter layer. Test cells with partially electron irradiated areas are used to demonstrate that the method is not sensitive to inhomogeneous dark I-V parameters. © 2013 IEEE.
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Nesswetter H; Dyck W; Lugli P; Bett A; Zimmermann C (2013)A method to measure the series resistance of GaIn P/Ga(In)As/Ge triple-junction solar cells spatially resolved is developed, based on luminescence imaging. With the help of network simulations, the dependence of the local ...
Rutzinger M; Salzberger M; Gerhard A; Nesswetter H; Lugli P; Zimmermann C (American Institute of Physics Inc., 2017)A method for measuring subcell capacitance voltage (C-V) in a multijunction solar cell is introduced. The subcell of interest is illuminated by a monochromatic light pulse with a ns rise time. The subcell capacitance is ...
Using variable threshold displacement energy for degradation fitting of particle irradiated multi-junction space solar cells Salzberger M; Nomayr C; Rutzinger M; Lugli P; Zimmermann CG (IEEE, 2016)The degradation of Ga0.5In0.5P/GaAs/Ge triple junction 3G28, 3G30 and isotype 3G28 Ga0.5In0.5P and GaAs cells is analysed and the characteristic degradation curves are determined. The well established displacement damage ...