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dc.contributor.authorReggiani L
dc.contributor.authorLugli P
dc.contributor.editor
dc.date.accessioned2018-08-06T10:19:23Z
dc.date.available2018-08-06T10:19:23Z
dc.date.issued1988
dc.identifier.issn0038-1101
dc.identifier.urihttp://dx.doi.org/10.1016/0038-1101(88)90337-1
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/0038110188903371
dc.identifier.urihttp://hdl.handle.net/10863/5627
dc.description.abstractWe present an original Monte Carlo procedure to account for generation-recombination noise through impurity centers in semiconductors. An exact decomposition procedure of the current spectral density evidences the importance of a cross-correlation contribution coming from velocity and number fluctuations.en_US
dc.language.isoenen_US
dc.rights
dc.titleGeneration-recombination noise of hot carriers in semiconductorsen_US
dc.typeArticleen_US
dc.date.updated2018-07-26T14:16:16Z
dc.publication.titleHot Carriers in Semiconductors: Proceedings of the Fifth International Conference, 20-24 July 1987, Boston, MA, USA
dc.language.isiEN-GB
dc.journal.titleSolid-State Electronics
dc.description.fulltextreserveden_US


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