Self-consistent tight-binding calculations of electronic and optical properties of semiconductor nanostructures
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Optical properties and electronic states of semiconductor nanostructures are calculated by using tight-binding models which account for valence band mixing, strain and external applied potentials in a self-consistent fashion. An appropriate formulation of the optical susceptibility in the tight-binding basis is given without introducing-any additional parameters. Results for strained and unstrained systems are given. Copyright (C) 1996 Published by Elsevier Science Ltd.