Spectroscopy of semiconductor microstructures
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SubjectAbsorption; Dispersion; Energie; Exciton; Nonlinear optics; Optical properties; Optics; Semiconductor; Simulation; Spectroscopy
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Self-consistent tight-binding calculations of electronic and optical properties of semiconductor nanostructures DiCarlo A; Pescetelli S; Paciotti M; Lugli P; Graf M (PERGAMON-ELSEVIER SCIENCE LTD, 1996)Optical properties and electronic states of semiconductor nanostructures are calculated by using tight-binding models which account for valence band mixing, strain and external applied potentials in a self-consistent ...
Di Carlo A; Reale A; Tocca L; Lugli P (1998)We present a tight-binding analysis of the polarization dependence of GaAs δ-strained semiconductors optical amplifiers. Our approach allows us to account for band nonparabolicity, valence band mixing, as well as thin layer ...
Initial thermalization of photoexcited carriers in GaAs studied by femtosecond luminescence spectroscopy Elsaesser T; Shah J; Rota L; Lugli P (AMERICAN PHYSICAL SOC, 1991)Relaxation of a nonequilibrium distribution of electrons and holes in GaAs following femtosecond photoexcitation is investigated via spectrally and time-resolved luminescence. A rapid onset of luminescence over a broad ...