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dc.contributor.authorElsaesser T
dc.contributor.authorShah J
dc.contributor.authorRota L
dc.contributor.authorLugli P
dc.contributor.editor
dc.date.accessioned2018-02-23T15:35:10Z
dc.date.available2018-02-23T15:35:10Z
dc.date.issued1991
dc.identifier.issn0031-9007
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevLett.66.1757
dc.identifier.urihttps://journals.aps.org/prl/abstract/10.1103/PhysRevLett.66.1757
dc.identifier.urihttp://hdl.handle.net/10863/4347
dc.description.abstractRelaxation of a nonequilibrium distribution of electrons and holes in GaAs following femtosecond photoexcitation is investigated via spectrally and time-resolved luminescence. A rapid onset of luminescence over a broad range shows that both electrons and holes are redistributed over a wide energy range within 100 fs, even at excitation densities as low as 10(17) cm-3. The data demonstrate carrier-carrier scattering rates higher than predicted by calculations with a statically screened interaction potential. Monte Carlo simulations using dynamical screening account for the experimental results.en_US
dc.language.isoenen_US
dc.publisherAMERICAN PHYSICAL SOCen_US
dc.rights
dc.titleInitial thermalization of photoexcited carriers in GaAs studied by femtosecond luminescence spectroscopyen_US
dc.typeArticleen_US
dc.date.updated2017-09-25T07:45:24Z
dc.publication.title
dc.language.isiEN-GB
dc.journal.titlePhysical Review Letters
dc.description.fulltextreserveden_US


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