Monte Carlo models and simulations
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A critical review of the Monte Carlo (MC) simulation as applied to semiconductor device modeling is presented. The general principles of the method are analized and discussed in detail, together with the physical model implemented for the description of carrier transport in III–V semiconductors. Some special features that can be very useful in dealing with real devices are also examined. It is shown that the MC method is a mature technique for modeling, and can offer great advantages over more traditional approaches. Critical points are pointed out and analyzed. A variety of applications in the field of III–V device modeling is then outlined.