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dc.contributor.authorDicarlo A
dc.contributor.authorLugli P
dc.contributor.editor
dc.date2017-09-22T00:00:00Z
dc.date.accessioned2018-02-16T13:52:34Z
dc.date.available2018-02-16T13:52:34Z
dc.date.issued1993
dc.identifier.issn0741-3106
dc.identifier.urihttp://dx.doi.org/10.1109/55.215125
dc.identifier.urihttp://ieeexplore.ieee.org/abstract/document/215125/
dc.identifier.urihttp://hdl.handle.net/10863/4331
dc.description.abstractBy using a self-consistent Monte Carlo simulation, we demonstrate the importance of dead-space effects in the near-avalanche regime of AlGaAs/GaAs HBT's. We show that the space-dependent ionization coefficient reaches its maximum inside the collector region, displaced by several hundred angstroms from the peak electric field at the collector-base junction, and from the maximum of the carrier average energy. A delay equation is then proposed that overcomes the failure of local models in describing such effects.en_US
dc.language.isoenen_US
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen_US
dc.rights
dc.titleDead-Space Effects Under Near-Breakdown Conditions in AlGaAs/GaAs HBT’sen_US
dc.typeArticleen_US
dc.date.updated2017-09-25T07:44:46Z
dc.publication.title
dc.language.isiEN-GB
dc.journal.titleIEEE Electron Device Letters
dc.description.fulltextopenen_US


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