Dead-Space Effects Under Near-Breakdown Conditions in AlGaAs/GaAs HBT’s
MetadataShow full item record
By using a self-consistent Monte Carlo simulation, we demonstrate the importance of dead-space effects in the near-avalanche regime of AlGaAs/GaAs HBT's. We show that the space-dependent ionization coefficient reaches its maximum inside the collector region, displaced by several hundred angstroms from the peak electric field at the collector-base junction, and from the maximum of the carrier average energy. A delay equation is then proposed that overcomes the failure of local models in describing such effects.