Comparison of Cellular Automata and MINIMOS simulations of submicron MOSFETs
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We present a detailed comparison of a novel cellular automaton (CA) technique and a standard drift diffusion calculation (MINIMOS) of high field transport in semiconductor devices. The CA method may be viewed as equivalent to the Monte Carlo technique but can easily handle ensembles with more than 105 particles, can efficiently deal with complex geometries and achieve accelerations on multiprocessor computers that scale linearly with the number of processors. With this new technique Si MOSFETs have been simulated for different gate lengths and gate voltages and the results compared to MINIMOS. I.