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dc.contributor.authorElsaesser T
dc.contributor.authorShah J
dc.contributor.authorRota L
dc.contributor.authorLugli P
dc.contributor.editor
dc.date.accessioned2018-02-15T16:44:31Z
dc.date.available2018-02-15T16:44:31Z
dc.date.issued1992
dc.identifier.issn0268-1242
dc.identifier.urihttp://dx.doi.org/10.1088/0268-1242/7/3B/033
dc.identifier.urihttp://iopscience.iop.org/article/10.1088/0268-1242/7/3B/033/meta
dc.identifier.urihttp://hdl.handle.net/10863/4303
dc.description.abstractThermalization of a non-equilibrium distribution of electrons and holes generated by femtosecond photoexcitation is studied in GaAs and InP via spectrally and temporally resolved luminescence. In both materials, a rapid onset of luminescence is observed over a broad spectral range from the bandgap up to 1.7 eV. The data demonstrate the redistribution of both electrons and holes over a wide energy range within 100 fs, even for excitation densities as low as 10(17) cm-3. Equilibration is dominated by carrier-carrier collisions with scattering rates that are considerably higher than predicted by theoretical simulations using static screening of the interaction potential. Our Monte Carlo calculations, applying a molecular dynamics scheme, give enhanced scattering among the carriers with respect to a static screening approach, resulting in smoother distribution functions and luminescence spectra which are in good agreement with the experimental results.en_US
dc.language.isoenen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.rights
dc.titleFemtosecond luminescence spectroscopy of carrier thermalization in GaAs and InPen_US
dc.typeArticleen_US
dc.date.updated2017-09-25T07:43:22Z
dc.publication.title
dc.language.isiEN-GB
dc.journal.titleSemiconductor Science and Technology
dc.description.fulltextreserveden_US


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