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dc.contributor.authorLugli P
dc.contributor.editor
dc.date.accessioned2018-02-15T16:07:03Z
dc.date.available2018-02-15T16:07:03Z
dc.date.issued1989
dc.identifier.isbn978-1-4757-0772-4
dc.identifier.issn0258-1221
dc.identifier.urihttp://dx.doi.org/10.1007/978-1-4757-0770-0_16
dc.identifier.urihttp://link.springer.com/chapter/10.1007/978-1-4757-0770-0_16
dc.identifier.urihttp://hdl.handle.net/10863/4294
dc.description.abstractA series of new devices generically called “hot electron transistors” is based on the idea of improving the device performance by injecting fast electrons into thin base regions. We present here a theoretical study, based on a Monte Carlo simulation, of the characteristic energy and momentum losses of hot electrons injected into a doped region, as found for example in the planar doped barrier (PDB) and in the tunneling hot electron transfer amplifier (THETA) devices. The interaction between the injected electrons and the background of cold carriers is shown to be a very effective channel of dissipation. The full self-consistent simulation of the THETA device is also presented.en_US
dc.language.isoenen_US
dc.publisherSpringer New Yorken_US
dc.relation.ispartofseriesNATO Advanced Science Institutes Series B: Physics;
dc.rights
dc.titleHot Electron Effects in Microstructuresen_US
dc.typeBook chapteren_US
dc.date.updated2017-09-25T07:42:58Z
dc.publication.titleBand Structure Engineering in Semiconductor Microstructures
dc.language.isiEN-GB
dc.description.fulltextreserveden_US


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