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dc.contributor.authorLugli P
dc.contributor.authorFerry D
dc.contributor.editor
dc.date.accessioned2018-02-15T15:45:32Z
dc.date.available2018-02-15T15:45:32Z
dc.date.issued1985
dc.identifier.isbn978-3-642-70782-7
dc.identifier.issn0172-5734
dc.identifier.urihttp://dx.doi.org/10.1007/978-3-642-70780-3_15
dc.identifier.urihttp://link.springer.com/chapter/10.1007/978-3-642-70780-3_15
dc.identifier.urihttp://hdl.handle.net/10863/4287
dc.description.abstractAs the dimension of solid-state devices reaches the submicron limit and sub-picosecond phenomena become relevant, the electron-electron interaction can be of great importance to the device performance. Such interaction defines a characteristic microscopic time scale much shorter than the typical relaxation times of the electron-phonon interaction [1]. In the following, we present a complete treatment of the carrier-carrier interaction, starting with the analysis of the wave-vector- and frequency-dependent dielectric function ε(q,ω). An Ensemble Monte Carlo (EMC) technique is then used to study the effect of the interaction on the transport properties of GaAs.en_US
dc.language.isoenen_US
dc.publisherSpringer Berlin Heidelbergen_US
dc.relation.ispartofseriesSpringer Series in Electronics and Photonics;
dc.rights
dc.titleCarrier-Carrier Interaction and Picosecond Phenomena in Polar Semiconductorsen_US
dc.typeBook chapteren_US
dc.date.updated2017-09-25T07:42:46Z
dc.publication.titlePicosecond Electronics and Optoelectronics: Part II
dc.language.isiEN-GB
dc.description.fulltextreserveden_US


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