Carrier-Carrier Interaction and Picosecond Phenomena in Polar Semiconductors
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As the dimension of solid-state devices reaches the submicron limit and sub-picosecond phenomena become relevant, the electron-electron interaction can be of great importance to the device performance. Such interaction defines a characteristic microscopic time scale much shorter than the typical relaxation times of the electron-phonon interaction . In the following, we present a complete treatment of the carrier-carrier interaction, starting with the analysis of the wave-vector- and frequency-dependent dielectric function ε(q,ω). An Ensemble Monte Carlo (EMC) technique is then used to study the effect of the interaction on the transport properties of GaAs.
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