Full-band 3-D Monte Carlo simulation of InAs nanowires and high frequency analysis
MetadataShow full item record
In this paper, we have investigated the electron transport and frequency response of the state-of-the-art single-InAs nanowire (NW) FETs using a full-band Monte Carlo simulator. InAs transistors using a single NW as the channel reveal excellent properties such as high current densities, high transconductance, and superior mobility when compared with silicon devices. One aspect that has been neglected until now is the high-frequency (HF) response of such devices. We perform a detailed HF analysis, calibrating our simulations with the experimental measurements that are successfully reproduced. We are able to make predictions about the electron distribution inside the NW transistor, and via a small signal analysis, we determine the intrinsic cutoff frequency and maximum frequency of oscillation. We compare these with the extrinsic measured figures of merit and observe a large discrepancy, which we are able to attribute to the parasitic elements. We finally perform a large signal analysis and investigate the nonlinearity of the device and the power transfer to the harmonics.
Showing items related by title, author, creator and subject.
Popescu B; Popescu D; Luppina P; Julian T; Koblmüller G; Lugli P; Goodnick S (IEEE, 2015)In this paper, we investigate the electrical and optical properties of novel InGaAs nanowire solar cells. Key features like high optical absorption and excellent charge carrier mobility make them an attractive candidate ...
Melzer K; Brandlein M; Popescu B; Popescu D; Lugli P; Scarpa G (ROYAL SOC CHEMISTRY, 2014)In this work we fabricate and characterize field-effect transistors based on the solution-processable semiconducting polymer poly(3-hexylthiophene) (P3HT). Applying two independent gate potentials to the electrolyte-gated ...
Popescu D; Popescu B; Brandlein M; Melzer K; Lugli P (Institute of Electrical and Electronics Engineers Inc., 2015)In this paper, we present a modeling framework suited for the theoretical study of electrolyte-gated organic thin-film transistors. Employing a novel, fully self-consistent, coupled Poisson-Boltzmann/drift-diffusion ...