Optical gain analysis of c-InGaN quantum wells on unstrained c-In0.31Ga0.69N templates
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SubjectValence band mixing; Multiband; Threshold carrier; Spectral range; Internal electric fields; Gain analysis
We investigate the optical properties of c-InxGa1-xN (x = 0.31-0.44) quantum wells (QWs) on unstrained c-In0.31Ga0.69N templates in the green-to-red spectral range using self-consistent multiband k.p theory. The transverse-electric-and transverse-magnetic-polarized optical gains are much higher for QWs on unstrained c-In0.31Ga0.69N templates compared with conventional templates because of a smaller internal electric field and strong valence band mixing. Using c-InxGa1-xN QWs on c-In0.31Ga0.69N templates is expected to reduce the threshold carrier density in the green range and extend the operable wavelength into the red range. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4774290]
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