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dc.contributor.authorScarpa G
dc.contributor.authorAbdellah A
dc.contributor.authorExner A
dc.contributor.authorHarrer S
dc.contributor.authorBlanco GP
dc.contributor.authorWiedemann W
dc.contributor.authorSchmidt-Mende L
dc.contributor.authorLugli P
dc.contributor.editor
dc.date.accessioned2017-11-16T10:17:56Z
dc.date.available2017-11-16T10:17:56Z
dc.date.issued2011
dc.identifier.issn1536-125X
dc.identifier.urihttp://dx.doi.org/10.1109/TNANO.2010.2048433
dc.identifier.urihttp://ieeexplore.ieee.org/abstract/document/5451089/
dc.identifier.urihttp://hdl.handle.net/10863/3857
dc.description.abstractWe use thermal and room temperature nanoimprint lithography (NIL) for directly patterning the photoactive polymer poly(3-hexylthiophene-2,5-diyl) (P3HT) in the sub-50-nm region. Different types of molds were used to directly imprint the desired structures into P3HT thin films. Good pattern transfer is achieved independent of the presence of other underlying polymer layers or the type of substrate incorporated. Further, we discuss the future application of this technology to the fabrication of ordered hetero-juction organic photovoltaic devices and demonstrate that the NIL process involved does not damage the polymer or alter its chemical or electrical properties.en_US
dc.language.isoenen_US
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen_US
dc.rights
dc.subjectOrganic semiconductorsen_US
dc.subjectOrganic photovoltaic devices (OPVs)en_US
dc.subjectNanostructuringen_US
dc.subjectNanoimprint lithography (NIL)en_US
dc.subjectPoly(3-hexylthiophene-2en_US
dc.titlePatterning Poly (3-Hexylthiophene) in the Sub-50-nm Region by Nanoimprint Lithographyen_US
dc.typeArticleen_US
dc.date.updated2017-07-31T10:11:42Z
dc.publication.title
dc.language.isiEN-GB
dc.journal.titleIEEE Transactions on Nanotechnology
dc.description.fulltextreserveden_US


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