Determination of subcell I-V characteristics of multijunction solar cells using optical coupling
MetadataShow full item record
A method for the determination of the subcell I-V characteristics of multijunction solar cells in the presence of optical coupling is presented and applied to a GaInP/GaInAs/Ge triple-junction solar cell. Each of the subcells is described by a two-diode model and can be illuminated by a narrowband light source externally. Optical coupling is then used explicitly to generate current in one subcell, which is not illuminated externally. This approach yields the magnitude of optical coupling and a relationship between the two diode parameters of each subcell. The remaining cell parameters are determined with the help of pulsed illumination. In this fashion, the open circuit voltage of individual subcells is accessible, despite the fact that not all junctions are illuminated.
Showing items related by title, author, creator and subject.
Nesswetter H; Jost N; Lugli P; Bett A; Zimmermann C (American Institute of Physics Inc., 2015)The open circuit voltage of a single subcell in a multijunction cell stack can be measured with the help of pulsed, millisecond illumination. This concept makes use of the fact that the charging of the non-illuminated cell ...
A theoretical analysis of the optical absorption properties in one-dimensional InAs/GaAs quantum dot superlattices Kotani T; Birner S; Lugli P; Hamaguchi C (American Institute of Physics Inc., 2014)We present theoretical investigations of miniband structures and optical properties of InAs/GaAs one-dimensional quantum dot superlattices (1D-QDSLs). The calculation is based on the multi-band k·p theory, including the ...
Design and experimental test of refractive secondary optics on the electrical performance of a 3-junction cell used in CPV systems Renzi M; Cioccolanti L; Barazza G; Egidi L; Comodi G (2017)This work analyzes and compares the effects of the secondary optics on the performance of a triple junction solar cell used in a compact HCPV prototype unit. The HCPV system is composed of triple junction III-V (Ga0.5In0.5P, ...