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Ultrafast internal thermalization of photoexcited carriers in polar semiconductors (Invited Paper)
(International Society for Optical Engineering, 1992)We present a combined experimental and theoretical study of the ultrafast internal thermalization of high energy carriers created by laser excitation. Luminescence up-conversion is used to monitor the spectral and temporal ... -
Can cellular automata methods compete with Monte Carlo semiconductor device simulations?
(IEEE, 1993)A cellular-automaton (CA) approach for solving the Boltzmann equation is presented and applied to semiconductor device simulation. The comparison with Drift Diffusion and Monte Carlo (MC) algorithms shows the capabilities ... -
Intersubband relaxation of hot carriers in coupled quantum wells
(SPIE, 1990)We use an ensemble Monte Carlo simulation of coupled electrons, holes and polar optical phonons in multiple quantum well systems to model the intersubband relaxation of hot carriers measured in ultra-fast optical experiments. ... -
Light emission from hot carriers in polar semiconductor devices
(SPIE, 1993)We present a theoretical study of hot-carrier induced light emission in III-V semiconductor devices. Carrier heating under the intense electric fields present under high bias conditions are studied via a selfconsistent ... -
Effect of phonon confinement in quantum well systems
(SPIE, 1990)We discuss the role of LO-phonons confinement in quantum well systems, by comparing two different phonon models that have been proposed in the literature. A critical discussion concerning the use of macroscopic approaches ...