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    • Low temperature rectifying junctions for crossbar non-volatile memory devices 

      Tallarida G; Huby N; Kutrzeba-Kotowska B; Spiga S; Arcari M; Csaba G; Lugli P; Redaelli A; Bez R (IEEE, 2009)
      ZnO-based Schottky junctions fabricated at low temperature are proposed as selectors for crossbar non-volatile memory devices. Rectifying ratio over 10 and forward current density as high as 10 A/cm are reported. Results ...