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    • Breakdown triggering in PM-HEMTs studied by means of Monte Carlo simulator 

      Di Carlo A; Rossi L; Lugli P; Meneghesso G; Zanoni E (Editions Frontières, 1999)
      We present a theoretical investigation of the near-breakdown scenario in pseudomorphic High Electron Mobility Transistors (HEMTs). We show that the main mechanism for the enhanced drain current is a parasitic bipolar effict ...