Now showing items 1-4 of 4
Monte Carlo investigation of hot photoexcited electron relaxation in GaAs
(Springer Berlin Heidelberg, 1987)
Recently, several authors [1–3] have investigated the dynamics of electron-hole plasma generated by picosecond and sub-picosecond laser pulses in GaAs. These measurements have indicated the importance of electron-hole ...
Carrier-Carrier Interaction and Picosecond Phenomena in Polar Semiconductors
(Springer Berlin Heidelberg, 1985)
As the dimension of solid-state devices reaches the submicron limit and sub-picosecond phenomena become relevant, the electron-electron interaction can be of great importance to the device performance. Such interaction ...
The Monte Carlo Method for Semiconductor Device Simulation
(Springer Vienna, 1989)
The application of the Monte Carlo method to the simulation of semiconductor devices is presented. A review of the physics of transport in semiconductors is given, followed by an introduction to the physics of semiconductor ...
Hot Electron Effects in Microstructures
(Springer New York, 1989)
A series of new devices generically called “hot electron transistors” is based on the idea of improving the device performance by injecting fast electrons into thin base regions. We present here a theoretical study, based ...