Now showing items 1-2 of 2

    • HEMT models and simulations 

      Lugli P; Paciotti M; Calleja E; Munoz E; Sanchez-Rojas J; Dessenne F; Fauquembergue R; Thobel J; Zandler G (Springer, 1996)
      The paper presents a series of modeling tools for pseudomorphic High Electron Mobility Transistors, discussing their physical content and presenting specific applications. The presented results will show the most peculiar ...
    • Microscopic Analysis of Noise Behavior in Semiconductor Devices by the Cellular Automaton Method 

      Rein A; Zandler G; Saraniti M; Lugli P; Vogl P (Springer US, 1996)
      Noise is one of the crucial features in modern semiconductor devices. Nevertheless, only a few microscopic investigations of intrinsic noise behavior of semiconductor devices in the GHz regime have been performed in the ...