Now showing items 1-2 of 2

    • Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo(phenylene vinylene)s 

      Schukfeh MI; Storm K; Mahmoud A; Sondergaard RR; Szwajca A; Hansen A; Hinze P; Weimann T; Svensson SF; Bora A; Dick KA; Thelander C; Krebs FC; Lugli P; Samuelson L; Tornow M (AMER CHEMICAL SOC, 2013)
      We have investigated the electronic transport through 3 mu m long, 45 nm diameter InAs nanowires comprising a 5 nm long InP segment as electronic barrier. After assembly of 12 nm long oligo(phenylene vinylene) derivative ...
    • Modeling and high-frequency simulation of InAs nanowires 

      Popescu B; Popescu D; Lugli P (Institute of Electrical and Electronics Engineers Inc., 2014)
      In this paper, we have investigated the transport in InAs nanowire-based wrap gate field-effect transistors and their high-frequency performance. State-of-the-art InAs devices reveal excellent dc performance in terms of ...