Now showing items 1-2 of 2

    • Silicon nanowires: Catalytic growth and electrical characterization 

      Weber W; Duesberg G; Graham A; Liebau M; Unger E; Cheze C; Geelhaar L; Lugli P; Riechert H; Kreupl F (2006)
      Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO, Si N, ...
    • Silicon-nanowire transistors with intruded nickel-silicide contacts 

      Weber WM; Geelhaar L; Graham AP; Unger E; Duesberg GS; Liebau M; Pamler W; Cheze C; Riechert H; Lugli P; Kreupl F (AMER CHEMICAL SOC, 2006)
      Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths. The gate length was shortened by ...