Now showing items 1-3 of 3
(Institute of Physics Publications, 1994)A theoretical investigation of impact ionization and associated light emission in GaAs MESFETs, GaAs/AlGaAs HEMTs and HBTs is presented. Based on band structure and Monte Carlo calculations, we show that light emission by ...
(SPIE, 1994)A numerical model of bulk electroabsorption modulators has been developed. It consists of a quasi-2D representation based on a drift-diffusion approach and includes the presence of heterostructures and Fermi statistics for ...