Now showing items 1-10 of 14
A note on a theorem of Conley and Zehnder
(World Scientific, 1987)
A Poincarè-Birkhoff type result in higher dimensions
Monte Carlo investigation of hot photoexcited electron relaxation in GaAs
(Springer Berlin Heidelberg, 1987)
Recently, several authors [1–3] have investigated the dynamics of electron-hole plasma generated by picosecond and sub-picosecond laser pulses in GaAs. These measurements have indicated the importance of electron-hole ...
Carrier-Carrier Interaction and Picosecond Phenomena in Polar Semiconductors
(Springer Berlin Heidelberg, 1985)
As the dimension of solid-state devices reaches the submicron limit and sub-picosecond phenomena become relevant, the electron-electron interaction can be of great importance to the device performance. Such interaction ...
Hot Electron Effects in Microstructures
(Springer New York, 1989)
A series of new devices generically called “hot electron transistors” is based on the idea of improving the device performance by injecting fast electrons into thin base regions. We present here a theoretical study, based ...
Hot Electron Dynamics Monte Carlo Simulation in Heterostructure Semiconductor Devices
This paper reports on a Monte Carlo simulation of the hot electron transport phenomenon in an heterostructure semiconductor device. Two different electron populations have been simulated: the hot electrons injected via a ...
Electron-electron interaction effect on the spectral density of current fluctuations of hot electrons in Si
The effect of the electron-electron interaction on the current spectral density due to velocity fluctuations is quantitatively calculated through an ensemble Monte Carlo simulation. Results for the case of electrons in ...
Dynamical Simulation Of A Perturbed Phonon Distribution Induced By Hot-Carrier Thermalisation In GaAs
Time-resolved luminescence and Raman measurements have indicated in recent years the existence of nonequilibrium phonon distributions, as a result of the cooling of phototexcited electrons and holes in GaAs. While several ...
Monte-Carlo Simulation as a Novel Technique in the Study of Shallow Centers
(Institute of Physics, 1989)
We present the Monte Carlo technique as a novel numerical method to investigate recombination and generation processes from shallow impurity centers. In particular, we provide a first-principle derivation of the microscopic ...
Monte-Carlo modeling of hot electron gate current in MOSFETs
In this work, the hot electron induced gate current in MOSFETs is modeled by means of a Monte-Carlo simulator that significantly improves on the state of the art in that: 1) an accurate two- dimensional description is used ...