Now showing items 1-6 of 6
Hot Electron Dynamics Monte Carlo Simulation in Heterostructure Semiconductor Devices
This paper reports on a Monte Carlo simulation of the hot electron transport phenomenon in an heterostructure semiconductor device. Two different electron populations have been simulated: the hot electrons injected via a ...
A generalization of Kubo formalism for hot-electron transport
(PERGAMON-ELSEVIER SCIENCE LTD, 1988)
We present a generalization of Kubo formalism to the case of far from equilibrium conditions, as obtained in semiconductors high field transport. Analytical formulae are found to be in excellent agreement with numerical ...
Monte Carlo Analysis of Quantum Transport and Fluctuations in Semiconductor 2
The first topic treated is quantum transport. Two major lines of research have been investigated: the first is based on the introduction of the joint spectral density into a traditional Monte Carlo simulation; the second ...
Monte Carlo Probe Of Ultrafast Phenomena In Polar Semiconductors
(International Society for Optical Engineering, 1988)
The paper presents a Monte Carlo study of ultrafast phenomena in polar semiconductors. The main focus is given to the analysis of cooling of carriers following subpicosecond laser excitations in GaAs and InP. Excellent ...
Generation-recombination noise of hot carriers in semiconductors
We present an original Monte Carlo procedure to account for generation-recombination noise through impurity centers in semiconductors. An exact decomposition procedure of the current spectral density evidences the importance ...
Initial relaxation of photoexcited carriers in GaAs and GaAs quantum wells under subpicosecond excitation
(Pergamon Press, 1988)
After excitation by a subpicosecond pulse, we observe a very slow rise of the luminescence both in GaAs and in GaAs quantum wells. By comparing the results in GaAs and InP, we show that the slow rise in GaAs and GaAs quantum ...