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Carrier-Carrier Interaction and Picosecond Phenomena in Polar Semiconductors
(Springer Berlin Heidelberg, 1985)
As the dimension of solid-state devices reaches the submicron limit and sub-picosecond phenomena become relevant, the electron-electron interaction can be of great importance to the device performance. Such interaction ...
Electron-electron interaction effect on the spectral density of current fluctuations of hot electrons in Si
The effect of the electron-electron interaction on the current spectral density due to velocity fluctuations is quantitatively calculated through an ensemble Monte Carlo simulation. Results for the case of electrons in ...
Degeneracy in the ensemble Monte Carlo method for high-field transport in semiconductors
An algorithm to include the Pauli exclusion principle in the Ensemble Monte Carlo method is presented. The results indicate that significant changes in the transport properties of GaAs have to be expected when degenerate ...