Now showing items 1-6 of 6
Electron-electron interaction effect on the spectral density of current fluctuations of hot electrons in Si
The effect of the electron-electron interaction on the current spectral density due to velocity fluctuations is quantitatively calculated through an ensemble Monte Carlo simulation. Results for the case of electrons in ...
Dynamical Simulation Of A Perturbed Phonon Distribution Induced By Hot-Carrier Thermalisation In GaAs
Time-resolved luminescence and Raman measurements have indicated in recent years the existence of nonequilibrium phonon distributions, as a result of the cooling of phototexcited electrons and holes in GaAs. While several ...
A generalization of Kubo formalism for hot-electron transport
(PERGAMON-ELSEVIER SCIENCE LTD, 1988)
We present a generalization of Kubo formalism to the case of far from equilibrium conditions, as obtained in semiconductors high field transport. Analytical formulae are found to be in excellent agreement with numerical ...
Monte-Carlo Simulation as a Novel Technique in the Study of Shallow Centers
(Institute of Physics, 1989)
We present the Monte Carlo technique as a novel numerical method to investigate recombination and generation processes from shallow impurity centers. In particular, we provide a first-principle derivation of the microscopic ...
Monte Carlo Analysis of Quantum Transport and Fluctuations in Semiconductor 2
The first topic treated is quantum transport. Two major lines of research have been investigated: the first is based on the introduction of the joint spectral density into a traditional Monte Carlo simulation; the second ...
Generation-recombination noise of hot carriers in semiconductors
We present an original Monte Carlo procedure to account for generation-recombination noise through impurity centers in semiconductors. An exact decomposition procedure of the current spectral density evidences the importance ...