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Modeling of leakage currents in high-k dielectrics: Three-dimensional approach via kinetic Monte Carlo
(2010)We report on a simulation algorithm, based on kinetic Monte Carlo techniques, that allows us to investigate transport through high-permittivity dielectrics. In the example of TiN/ ZrO /TiN capacitor structures, using ... -
Nano antenna array for terahertz detection
(2011)Infrared (IR) detectors have been fabricated consisting of antenna-coupled metal-oxide-metal diodes (ACMOMDs). These detectors were defined using electron beam lithography with shadow evaporation metal deposition. They are ... -
Printed array of thin-dielectric metal-oxide-metal (MOM) tunneling diodes
(2011)A large area array of metal-oxide-metal (MOM) tunneling diodes with an ultrathin dielectric (∼3.6 nm aluminum oxide) have been fabricated via a transfer-printing process. The MOM diodes exhibit an excellent tunneling ... -
Role of defect relaxation for trap-assisted tunneling in high-kappa thin films: A first-principles kinetic Monte Carlo study
(AMER PHYSICAL SOC, 2012)We assess the impact of structural relaxation of defects upon charging on trap-assisted tunneling in high-kappa dielectric materials. ZrO(2)/Al(2)O(3)/ZrO(2) thin films are taken as an exemplary system. In our completely ... -
Ultimate scaling of TiN/ZrO2/TiN capacitors: Leakage currents and limitations due to electrode roughness
(2011)In this paper, we investigate the influence of electrode roughness on the leakage current in TiN/high-κ ZrO/TiN (TZT) thin-film capacitors which are used in dynamic random access memory cells. Based on a microscopic transport ...
