Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O-2 plasma treatment
MetadataShow full item record
SubjectCF4; Plasma treatment; Flexible electronics; Contact resistance; A-IGZO; thin-film transistor
In this work, we analyze the effect of CF4/O-2 plasma treatment on the contact interface between the amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) semiconductor and Titanium-Gold electrodes. First, the influence of CF4/O-2 plasma treatment is evaluated using transmission line structures and compared to pure O-2 and CF4 plasma, resulting in a reduction of the contact resistance RC by a factor of 24.2 compared to untreated interfaces. Subsequently, the CF4/O-2 plasma treatment is integrated in the a-IGZO thin-film transistor (TFT) fabrication process flow. We achieve a reduction of the gate bias dependent RC by a factor up to 13.4, which results in an increased current drive capability. Combined with an associated channel length reduction, the effective linear field-effect mobility mu(lin,FE,eff) is increased by up to 74.6% for the CF4/O-2 plasma treated TFTs compared to untreated reference devices.
Showing items related by title, author, creator and subject.
Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation Münzenrieder N; Salvatore G; Petti L; Zysset C; Büthe L; Vogt C; Cantarella G; Tröster G (American Institute of Physics Inc., 2014)In recent years new forms of electronic devices such as electronic papers, flexible displays, epidermal sensors, and smart textiles have become reality. Thin-film transistors (TFTs) are the basic blocks of the circuits ...
Mechanically flexible vertically integrated a-IGZO thin-film transistors with 500 nm channel length fabricated on free standing plastic foil Petti L; Aguirre P; Münzenrieder N; Salvatore G; Zysset C; Furtiger A; Büthe L; Vogt C; Tröster G (IEEE, 2013)We report the first mechanically flexible amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) vertical thin-film transistors (VTFTs) with 500 nm channel length, fabricated on a freestanding plastic foil, using a low temperature ...
Design and analysis of high-gain amplifiers in flexible self-aligned a-IGZO thin-film transistor technology Shabanpour R; Meister T; Ishida K; Kheradmand-Boroujeni B; Carta C; Ellinger F; Petti L; Münzenrieder N; Salvatore G; Tröster G (Springer New York LLC, 2016)This paper presents two high-gain amplifiers fabricated in a flexible self-aligned amorphous indium gallium zinc oxide thin-film transistor (TFT) technology. One common-source amplifier relies on positive feedback to provide ...