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Now showing items 1-10 of 14
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Microscopic Description of Nanostructures Grown on (N11) Surfaces
(SPRINGER, 2003)We report on a theoretical study of GaAs/InGaAs based nanostructures grown along the [N11] direction. The elastic deformations of the structures were calculated by means of the continuum elasticity theory, taking into ... -
Enhancement of the effective tunnel mass in ultrathin silicon dioxide layers
(2003)The enhancement of the effective tunnel mass in ultrathin silicon dioxide (SiO) layers was presented. The mass at the conduction band bottom of SiO was found to be different from the tunnel mass. The oxide thickness was ... -
Density-functional based tight-binding calculations on thiophene polymorphism
(TAYLOR & FRANCIS LTD, 2001)Total energy calculations based on a density-functional tight-binding scheme have been performed on polymorphic modifications of various thiophene crystals. The investigated structures include sulphanyl-substituted ... -
The simulation of molecular and organic devices: A critical review and look at future developments
(2007)Molecular devices have lately attracted increased attention due to some appealing features such as their low production cost, flexibility in the substrate choice, possibility of large area deployment, and possibly higher ... -
Breakdown quenching in high electron mobility transistor by using body contact
(2001)In this paper, the effect of a body contact (BC) to quench breakdown effects and increase the breakdown voltage in high-electron mobility transistors (HEMTs) is theoretically investigated. The body contact is formed by a ... -
Full-band approaches for the quantum treatment of nanometer-scale MOS structures
(2002)Using quantum mechanical methods that include the full-band structure, we study two quantum mechanical phenomena that occur in MOS transistors: ultrathin oxide tunneling and inversion layer quantization. We obtain good ... -
Tuning the Piezoelectric Fields in Quantum Dots: Microscopic Description of Dots Grown on (N11) Surfaces
(2004)We theoretically investigated the elastic deformation and piezoelectric field in InAs quantum dots grown on (N11) GaAs substrates. Particular attention was given to the influence of the substrate orientation on both the ... -
Full band approach to tunneling in MOS structures
(2004)Using atomistic quantum mechanical tight-binding (TB) methods that include the full band structure, we study electron tunneling through three-dimensional models of n -Si/SiO /p-Si capacitors with thicknesses between 0.7 ... -
The influence of thermal fluctuations on the electronic transport of alkeno-thiolates
(2004)In this paper, we investigate the influence of molecular vibrations on the tunneling of electrons through alkeno-thiolates of varying lengths sandwiched in between two gold contacts. The study is confined to the elastic ... -
Gas sensing using single wall carbon nanotubes ordered with dielectrophoresis
(ELSEVIER SCIENCE SA, 2005)We demonstrate efficient NH3 detection in single wall carbon nanotubes (SWCNT) ordered by mean of dielectrophoretical process. The employed approach was to disperse the nanotubes, treated following a specific protocol, in ...
