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Polarization-independent δ-strained semiconductor optical amplifiers: A tight-binding study
(1998)We present a tight-binding analysis of the polarization dependence of GaAs δ-strained semiconductors optical amplifiers. Our approach allows us to account for band nonparabolicity, valence band mixing, as well as thin layer ... -
Effects of macroscopic polarization in III-V nitride multiple quantum wells
(AMER PHYSICAL SOC, 1999)Huge built-in electric fields have been predicted to exist in wurtzite III-V nitrides thin films and multilayers. Such fields originate from heterointerface discontinuities of the macroscopic bulk polarization of the ... -
A combined Monte Carlo and experimental analysis of light emission phenomena in AlGaAs/GaAs HBTs
(IOP PUBLISHING LTD, 1998)We present a detailed investigation of light emission phenomena connected with the presence of hot carriers in AlGaAs/GaAs heterojunction bipolar transistors. Electrons heated by the strong electric field at the base-collector ...