Abstract
In this work, a new simple and easy to use technique for parameter extraction in thin film transistors is presented and discussed. To avoid the approximations needed to extract the parameters from the linear regime, our method operates in the saturation regime allowing for the correct determination of all the transistor parameters, including its parasitic resistances and the mobility enhancement factor. To prove the efficacy of the presented technique, we extrapolated the parameters from simulated transistors with increasing parasitic resistances, showing that the presented method allows a much better estimation of the transistors parameters with respect to standard extrapolation techniques. Finally, we experimentally validate our procedure by performing a complete characterization of both organic and inorganic transistors featuring dihexyl-quaterthiophene and indium-gallium-zinc-oxide as semiconducting materials, respectively.