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Optical gain analysis of c-InGaN quantum wells on unstrained c-In0.31Ga0.69N templates
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Optical gain analysis of c-InGaN quantum wells on unstrained c-In0.31Ga0.69N templates

T Kotani, Paolo Lugli and C Hamaguchi
Applied Physics Letters, Vol.102(1)
102
07/01/2013
Handle:
https://hdl.handle.net/10863/3876

Abstract

Gain analysis Internal electric fields Multiband Spectral range Threshold carrier Valence band mixing Sensors
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url
http://aip.scitation.org/doi/abs/10.1063/1.4774290View

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