Abstract
Conductivity is a fundamental property of materials; in particular the precise quantification of electrical sheet resistance is essential for the development of electronic thin-film devices. Conventionally, resistive probes are used to perform the corresponding measurements. However, non-invasive methods are more desirable as they minimize the required sample preparation, as well as geometrical influences. Existing non-contact conductivity measurements mostly rely on the transmission of electromagnetic waves through conductive thin-films. Hence, they only characterize translucent samples at high frequencies. We present an alternative technique based on the attenuation of low frequency 10 kHz electric fields. The approach is used to quantify the field-effect induced conductivity variation of a flexible indium-gallium-zinc-oxide semiconductor film. A custom-built high-impedance electrometer is used to capacitively measure the attenuation of an alternating electric field passing through the film. The obtained data is discussed and related to the absolute conductivity with the aid of two bespoke models describing the impedance mismatch between the sample and its surroundings. The sheet conductivity is modulated and measured from 660 nS to 116 µS while conventional DC current/voltage measurements serve as a reference. Both methods show a high degree of correlation to the reference measurements. Unlike techniques based on light, the low frequency signal used here resembles quasi-static characteristics, and enables the direct measurement of DC parameters.